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| FDMA1032CZ 20V Complementary PowerTrench(R) MOSFET March 2008 FDMA1032CZ 20V Complementary PowerTrench(R) MOSFET General Description This device is designed specifically as a single package solution for a DC/DC 'Switching' MOSFET in cellular handset and other ultra-portable applications. It features an independent N-Channel & P-Channel MOSFET with low on-state resistance for minimum conduction losses. The gate charge of each MOSFET is also minimized to allow high frequency switching directly from the controlling device. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to switching applications. tm Features * Q1: N-Channel 3.7 A, 20V. * Q2: P-Channel -3.1 A, -20V. RDS(ON) = 95 m @ VGS = -4.5V RDS(ON) = 141 m @ VGS = -2.5V * Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm * HBM ESD protection level > 2kV (Note 3) * RoHS Compliant PIN 1 S1 G1 D1 D2 G1 D2 D1 G2 S2 RDS(ON) = 68 m @ VGS = 4.5V RDS(ON) = 86 m @ VGS = 2.5V D2 S1 1 2 3 6 5 4 D1 G2 S2 MicroFET 2x2 Absolute Maximum Ratings Symbol VDS VGS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25oC unless otherwise noted Parameter Q1 20 12 (Note 1a) Q2 -20 12 -3.1 -6 1.4 0.7 -55 to +150 Units V V A W C 3.7 6 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RJA RJA RJA RJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) (Note 1c) (Note 1d) 86 (Single Operation) 173 (Single Operation) 69 (Dual Operation) 151 (Dual Operation) C/W Package Marking and Ordering Information Device Marking 032 (c)2008 Fairchild Semiconductor Corporation Device FDMA1032CZ Reel Size 7'' Tape width 8mm Quantity 3000 units FDMA1032CZ Rev B2 (W) Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSS VGS(th) VGS(th) TJ RDS(on) TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage (Note 2) Test Conditions VGS = 0 V, ID = 250 A ID = -250 A VGS = 0 V, ID = 250 A, Referenced to 25C ID = -250 A, Referenced to 25C VDS = 16 V, VGS = 0 V VGS = 0 V VDS = -16 V, VGS = 12 V, VDS = 0 V VDS = VGS, ID = 250 A VDS = VGS, ID = -250 A ID = 250 A, Referenced to 25C ID = -250 A, Referenced to 25C VGS = 4.5 V, ID = 3.7 A VGS = 2.5 V, ID = 3.3 A VGS = 4.5 V, ID = 3.7 A, TJ = 125C VGS = -4.5V, ID = -3.1 A VGS = -2.5 V, ID = -2.5 A VGS = -4.5 V, ID = -3.1 A,TJ = 125C VDS = 10 V, ID = 3.7 A VDS = -10 V, ID = -3.1 A Q1 VDS = 10 V, VGS = 0 V, f = 1.0 MHz Q2 VDS = -10 V, VGS = 0 V, f = 1.0 MHz Type Min Typ Max Units Q1 Q2 Q1 Q2 Q1 Q2 All Q1 Q2 Q1 Q2 Q1 20 -20 15 -12 1 -1 10 0.6 -0.6 1.0 -1.0 -4 4 37 50 53 60 88 87 16 -11 340 540 80 120 60 100 1.5 -1.5 V mV/C A A V mV/C 68 86 90 95 141 140 m Off Characteristics On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 m S gFS Forward Transconductance Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance pF pF pF FDMA1032CZ Rev B2 (W) FDMA1032CZ 20V Complementary PowerTrench(R) MOSFET Electrical Characteristics Symbol Parameter (Note 2) TA = 25C unless otherwise noted Test Conditions Type Min Typ Max Units Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Q1 VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Q2 VDD = -10 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 Q1 VDS = 10 V, ID = 3.7 A, VGS = 4.5 V Q2 VDS = -10 V,ID =- 3.1 A, VGS =- 4.5 V Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 8 13 8 11 14 37 3 36 4 7 0.7 1.1 1.1 2.4 16 24 16 20 26 59 6 58 6 10 ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 1.1 A (Note 2) VGS = 0 V, IS = -1.1 A (Note 2) Q1 IF = 3.7 A, dIF/dt = 100 A/s Q2 IF = -3.1 A, dIF/dt = 100 A/s 0.7 -0.8 11 25 2 9 1.1 -1.1 1.2 -1.2 A V ns nC Notes: 2 1. RJA is determined with the device mounted on a 1 in pad of 2 oz. copper on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RJA is determined by the user's board design. (a) RJA = 86C/W when mounted on a 1in2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB (b) RJA = 173C/W when mounted on a minimum pad of 2 oz copper (d) RJA = 151C/W when mounted on a minimum pad of 2 oz copper (c) RJA = 69C/W when mounted on a 1in2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB a) 86oC/W when mounted on a 1in2 pad of 2 oz copper b) 173oC/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only protection against ESD. No gate overvoltage rating is implied. FDMA1032CZ Rev B2 (W) FDMA1032CZ 20V Complementary PowerTrench(R) MOSFET Typical Characteristics Q1 (N-Channel) 6 5 ID, DRAIN CURRENT (A) 4 3 2 1 VGS = 4.5V 3.5V 3.0V 2.5V 2.0V 2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 2.0V 1.8 1.6 1.4 1.2 1 0.8 0 1 2 3 4 ID, DRAIN CURRENT (A) 5 6 2.5V 3.0V 3.5V 4.0V 1.5V 4.5V 0 0 0.2 0.4 0.6 0.8 VDS, DRAIN-SOURCE VOLTAGE (V) 1 1.2 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.13 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 ID = 3.7A VGS = 4.5V ID = 1.85A 0.11 0.09 0.07 TA = 125 C o 0.05 TA = 25 C o 0.03 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. On-Resistance Variation with Temperature. 6 IS, REVERSE DRAIN CURRENT (A) VDS = 5V Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 10 1 0.1 TA = 125oC VGS = 0V 5 ID, DRAIN CURRENT (A) 4 3 2 1 o TA = 125 C o 0.01 0.001 -55oC 25 C 25 C -55 C o o 0 0.5 1 0.0001 2.5 0 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 1.5 2 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDMA1032CZ Rev B2 (W) FDMA1032CZ 20V Complementary PowerTrench(R) MOSFET Typical Characteristics Q1 (N-Channel) 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 3.7A 8 VDS = 5V 500 15V f = 1MHz VGS = 0 V 400 CAPACITANCE (pF) 10V 6 300 Ciss 4 200 Coss 2 100 Crss 0 0 2 4 6 Qg, GATE CHARGE (nC) 8 10 0 0 5 10 15 VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 7. Gate Charge Characteristics. 100 Figure 8. Capacitance Characteristics. 50 P(pk), PEAK TRANSIENT POWER (W) SINGLE PULSE RJA = 173C/W TA = 25C ID, DRAIN CURRENT (A) 10 RDS(ON) LIMIT 1ms 10ms 100ms 1s 10s DC 40 100us 30 1 20 0.1 VGS = 4.5V SINGLE PULSE RJA = 173C/W TA = 25C 10 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 0 0.0001 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RJA(t) = r(t) * RJA RJA =173 C/W P(pk) t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 t1 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDMA1032CZ Rev B2 (W) FDMA1032CZ 20V Complementary PowerTrench(R) MOSFET Typical Characteristics: Q2 (P-Channel) 6 5 -ID, DRAIN CURRENT (A) 4 3 2 1 0 0 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 4 5V 3.5V 3.0V 2.6 2.5V 2.0V 2.2 VGS = -2.0V 1.8 1.4 -2.5V -3.0V -3.5V -4.0V 1 -4.5V 1.5V 0.4 0.8 1.2 1.6 -VDS, DRAIN-SOURCE VOLTAGE (V) 2 0.6 0 1 2 3 4 -ID, DRAIN CURRENT (A) 5 6 Figure 12. On-Region Characteristics. Figure 13. On-Resistance Variation with Drain Current and Gate Voltage. 0.2 RDS(ON), ON-RESISTANCE (OHM) 1.5 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 ID = -3.1A VGS = -4.5V ID = -1.55A 0.16 0.12 TA = 125 C o 0.08 TA = 25 C o 0.04 0 2 4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 14. On-Resistance Variation with Temperature. 6 VDS = -5V Figure 15. On-Resistance Variation with Gate-to-Source Voltage. 100 VGS = 0V 5 -ID, DRAIN CURRENT (A) 4 3 2 1 25oC -IS, REVERSE DRAIN CURRENT (A) 10 1 0.1 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.6 TA = 125oC 25 C -55 C o o TA = 125oC -55oC 0 0 0.5 1 1.5 2 -VGS, GATE TO SOURCE VOLTAGE (V) 2.5 Figure 16. Transfer Characteristics. Figure 17. Body Diode Forward Voltage Variation with Source Current and Temperature. FDMA1032CZ Rev B2 (W) FDMA1032CZ 20V Complementary PowerTrench(R) MOSFET Typical Characteristics: Q2 (P-Channel) 10 -VGS, GATE-SOURCE VOLTAGE (V) ID = -3.1A 1000 f = 1MHz VGS = 0 V 800 -15V -10V 8 CAPACITANCE (pF) VDS = -5V 6 600 Ciss 400 Coss Crss 4 2 200 0 0 2 4 6 8 10 Qg, GATE CHARGE (nC) 12 14 0 0 4 8 12 16 -VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 18. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) 50 Figure 19. Capacitance Characteristics. -ID, DRAIN CURRENT (A) 10 40 SINGLE PULSE RJA = 173C/W TA = 25C RDS(ON) LIMIT 10ms 100ms 1ms 100us 30 1 DC 10s 1s 20 0.1 VGS = -4.5V SINGLE PULSE o RJA = 173 C/W TA = 25oC 10 0.01 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) 100 0 0.0001 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 20. Maximum Safe Operating Area. Figure 21. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RJA(t) = r(t) * RJA RJA =173 C/W P(pk) t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 t1 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 22. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDMA1032CZ Rev B2 (W) Dimensional Outline and Pad Layout FDMA1032CZ 20V Complementary PowerTrench MOSFET (R) rev3 FDMA1032CZ Rev B2 (W) FDMA1032CZ 20V Complementary PowerTrench(R) MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM * TM (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * tm FPSTM F-PFSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) tm PDP-SPMTM Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM Saving our world 1mW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SuperMOSTM (R) The Power Franchise(R) tm TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production FDMA1032CZ Rev B2 (W) F |
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